HD64F2318VTE25 Renesas Electronics America, HD64F2318VTE25 Datasheet - Page 653

• Manufacturer Part Number: HD64F2318VTE25
• Description: IC H8S MCU FLASH 256K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of HD64F2318VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

AC Characteristics
Table 17.20 AC Characteristics in Auto-Erase Mode
Conditions: V
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
Status polling start time
Status polling access time
Memory erase time
Erase setup time
Erase end setup time
WE rise time
WE fall time
I/O
A
5
18
to I/O
FWE
to A
I/O
I/O
WE
OE
CE
0
7
6
0
CC
= 3.3 V ±0.3 V, V
t
ens
Figure 17.27 Auto-Erase Mode Timing Waveforms
t
ces
t
f
t
ds
t
wep
H'20
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
nxtc
ceh
ces
dh
ds
wep
ests
spa
erase
ens
enh
r
f
t
t
ceh
SS
r
t
dh
= 0 V, T
t
nxtc
a
= 25°C ±5°C
Min
20
0
0
50
50
70
1
—
100
100
100
—
—
H'20
Erase end identifi-
cation signal
Erase normal end
confirmation signal
t
Rev.7.00 Feb. 14, 2007 page 619 of 1108
ests
t
erase
t
spa
Max
—
—
—
—
—
—
—
150
40000
—
—
30
30
H'00
t
enh
t
nxtc
REJ09B0089-0700
Section 17 ROM
Unit
μs
ns
ns
ns
ns
ns
ms
ns
ms
ns
ns
ns
ns