HD64F2318VTE25 Renesas Electronics America, HD64F2318VTE25 Datasheet - Page 882

IC H8S MCU FLASH 256K 100-QFP

HD64F2318VTE25

Manufacturer Part Number
HD64F2318VTE25
Description
IC H8S MCU FLASH 256K 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of HD64F2318VTE25

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
71
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Section 20 Electrical Characteristics
20.2.4
Table 20.17 A/D Conversion Characteristics
Condition B: V
Item
Resolution
Conversion time
Analog input capacitance
Permissible signal source impedance
Nonlinearity error
Offset error
Full-scale error
Quantization error
Absolute accuracy
20.2.5
Table 20.18 D/A Conversion Characteristics
Condition B: V
Rev.7.00 Feb. 14, 2007 page 848 of 1108
REJ09B0089-0700
Item
Resolution
Conversion time
Absolute accuracy
A/D Conversion Characteristics
D/A Conversion Characteristics
0 V, φ = 2 MHz to 25 MHz, T
T
0 V, φ = 2 MHz to 25 MHz, T
T
a
a
CC
CC
= –40°C to 85°C (wide-range specifications)
= –40°C to 85°C (wide-range specifications)
= 3.0 V to 3.6 V, AV
= 3.0 V to 3.6 V, AV
Min
8
CC
CC
Typ
8
±2.0
= 3.0 V to 3.6 V, V
= 3.0 V to 3.6 V, V
a
a
Min
10
10.6
= –20°C to 75°C (regular specifications),
= –20°C to 75°C (regular specifications),
Max
8
10
±3.0
±2.0
Typ
10
ref
ref
= 3.0 V to AV
= 3.0 V to AV
Unit
Bits
μs
LSB
LSB
Max
10
20
5
±5.5
±5.5
±5.5
±0.5
±6.0
Test Conditions
20-pF capacitive load
2-MΩ resistive load
4-MΩ resistive load
CC
CC
, V
, V
SS
SS
Unit
Bits
μs
pF
LSB
LSB
LSB
LSB
LSB
= AV
= AV
SS
SS
=
=

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