HD64F2318VTE25 Renesas Electronics America, HD64F2318VTE25 Datasheet - Page 726

• Manufacturer Part Number: HD64F2318VTE25
• Description: IC H8S MCU FLASH 256K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of HD64F2318VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 17 ROM
17.22.6 Block Division
The user MAT is divided into 64 kbytes (seven blocks), 32 kbytes (one block), and 4 kbytes (eight
blocks) as shown in figure 17.63. The user MAT can be erased in this divided-block units and the
erase-block number of EB0 to EB15 is specified when erasing.
The RAM emulation can be performed in the eight blocks of 4 kbytes.
Rev.7.00 Feb. 14, 2007 page 692 of 1108
REJ09B0089-0700
Note: * The RAM emulation can be performed in the eight blocks of 4 kbytes.
Address H'07FFFF
Address H'000000
Figure 17.63 Block Division of User MAT
<User MAT>
4 kbytes × 8
32 kbytes
64 kbytes
64 kbytes
64 kbytes
64 kbytes
64 kbytes
64 kbytes
64 kbytes
Erase block
EB0
EB7
EB8
EB9
EB10
EB11
EB12
EB13
EB14
EB15
to
*