HD64F2318VTE25 Renesas Electronics America, HD64F2318VTE25 Datasheet - Page 693

IC H8S MCU FLASH 256K 100-QFP

HD64F2318VTE25

Manufacturer Part Number
HD64F2318VTE25
Description
IC H8S MCU FLASH 256K 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of HD64F2318VTE25

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
71
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Section 17 ROM
17.16.3 Erase Mode (n = 1 for addresses H'000000 to H'03FFFF, and n = 2 for addresses
H'040000 to H'07FFFF)
Flash memory erasing should be performed block by block following the procedure shown in the
erase/erase-verify flowchart (single-block erase) shown in figure 17.46.
For the wait times (x, y, z, α, ß, γ, ε, η, θ) after bits are set or cleared in flash memory control
register n (FLMCRn) and the maximum number of programming operations (N), see section
20.3.6, Flash Memory Characteristics.
To perform data or program erasure, make a 1 bit setting for the flash memory area to be erased in
erase block register 1 or 2 (EBR1 or EBR2) at least (x) μs after setting the SWEn bit to 1 in flash
memory control register n (FLMCRn). Next, the watchdog timer is set to prevent overerasing in
the event of program runaway, etc. Set a value greater than (y + z + α + ß) ms as the WDT
overflow period. After this, preparation for erase mode (erase setup) is carried out by setting the
ESUn bit in FLMCRn, and after the elapse of (y) μs or more, the operating mode is switched to
erase mode by setting the En bit in FLMCRn. The time during which the En bit is set is the flash
memory erase time. Ensure that the erase time does not exceed (z) ms.
Note: With flash memory erasing, prewriting (setting all data in the memory to be erased to 0) is
not necessary before starting the erase procedure.
Rev.7.00 Feb. 14, 2007 page 659 of 1108
REJ09B0089-0700

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