HD64F2318VTE25 Renesas Electronics America, HD64F2318VTE25 Datasheet - Page 819

• Manufacturer Part Number: HD64F2318VTE25
• Description: IC H8S MCU FLASH 256K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of HD64F2318VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Table 17.69 AC Characteristics Auto-Erase Mode
Condition: V
Code
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Programming pulse width
Status polling start time
Status polling access time
Memory erase time
WE rise time
WE fall time
I/O5-0
A18-0
I/O7
I/O6
WE
OE
CE
CC
= 3.3 V ± 0.3 V, V
t
ces
tf
t
t
ds
wep
Figure 17.93 Timing in Auto-Erase Mode
H'20 or
H'25
t
tr
ceh
t
dh
SS
t
nxtc
= 0 V, T
Symbol
t
t
t
t
t
t
t
t
t
t
t
nxtc
ceh
ces
dh
ds
wep
ests
spa
erase
r
f
a
H'20 or
H'25
= 25˚C ± 5˚C
Erase normal
and confirmation
signal
Erase end
identification
signal
t
ests
Min
20
0
0
50
50
70
1
—
100
—
—
Rev.7.00 Feb. 14, 2007 page 785 of 1108
t
erase
t
spa
H'00
Max
—
—
—
—
—
—
—
150
40000
30
30
t
nxtc
REJ09B0089-0700
Section 17 ROM
Unit
μs
ns
ns
ns
ns
ns
ms
ns
ms
ns
ns