HD64F2318VTE25 Renesas Electronics America, HD64F2318VTE25 Datasheet - Page 635

• Manufacturer Part Number: HD64F2318VTE25
• Description: IC H8S MCU FLASH 256K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of HD64F2318VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Notes: 1. Prewriting (setting erase block data to all 0) is not necessary.
2. The values of x, y, z, α, β, γ, ε, η, θ, and N are shown in section 20.3.6, Flash Memory Characteristics.
3. Verify data is read in 16-bit (W) units.
4. Set only one bit in EBR1or EBR2. More than one bit cannot be set.
5. Erasing is performed in block units. To erase a number of blocks, the individual blocks must be erased sequentially.
Increment
address
NG
Figure 17.16 Erase/Erase-Verify Flowchart
NG
Set block start address to verify address
H'FF dummy write to verify address
*5
Clear ESU bit in FLMCR1
Clear SWE bit in FLMCR1
Set SWE bit in FLMCR1
Set ESU bit in FLMCR1
Clear EV bit in FLMCR1
Clear E bit in FLMCR1
Set EV bit in FLMCR1
Last address of block?
Set E bit in FLMCR1
erasing of all erase
Verify data = all 1?
Set EBR1, EBR2
Read verify data
End of erasing
Disable WDT
Enable WDT
Wait (z) ms
Wait (x) μs
Wait (y) μs
Wait (α) μs
Wait (β) μs
Wait (η) μs
Wait (θ) μs
Wait (γ) μs
Wait (ε) μs
blocks?
End of
n = 1
Start
OK
OK
OK
*1
*2
NG
*2
*4
*2
Start of erase
*2
Halt erase
*2
*2
*2
*2
*3
Rev.7.00 Feb. 14, 2007 page 601 of 1108
Clear SWE bit in FLMCR1
Clear EV bit in FLMCR1
Erase failure
Wait (η) μs
Wait (θ) μs
n ≥ N?
OK
*2
REJ09B0089-0700
NG
*2
Section 17 ROM
n ← n + 1