HD64F2318VTE25 Renesas Electronics America, HD64F2318VTE25 Datasheet - Page 243

• Manufacturer Part Number: HD64F2318VTE25
• Description: IC H8S MCU FLASH 256K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of HD64F2318VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Table 7.10 Number of States Required for Each Execution Phase
Access To:
Bus width
Access states
The number of execution states is calculated from the formula below. Note that Σ means the sum
of all transfers activated by one activation event (the number in which the CHNE bit is set to 1,
plus 1).
For example, when the DTC vector address table is located in on-chip ROM, normal mode is set,
and data is transferred from the on-chip ROM to an internal I/O register, the time required for the
DTC operation is 13 states. The time from activation to the end of the data write is 10 states.
Execution
phase
Number of execution states = I · S
Byte data read
Word data read
Byte data write
Word data write
Internal operation S
Vector read
Register
information
read/write
S
S
S
S
S
S
K
K
L
L
M
I
J
On-
Chip
RAM
32
1
1
1
1
1
1
—
1
I
+ Σ (J · S
On-
Chip
ROM
16
1
1
1
1
1
1
1
—
2
Internal I/O
Registers
8
—
—
2
4
2
4
1
J
+ K · S
Rev.7.00 Feb. 14, 2007 page 209 of 1108
16
2
—
2
2
2
2
1
—
K
Section 7 Data Transfer Controller
+ L · S
External Devices
8
2
2
4
2
4
1
4
—
L
) + M · S
8
3
3+m
6+2m 2
3+m
6+2m 2
1
6+2m 2
—
REJ09B0089-0700
M
16
2
2
2
1
—
16
3
3+m
—
3+m
3+m
3+m
3+m
1