HD64F2318VTE25 Renesas Electronics America, HD64F2318VTE25 Datasheet - Page 707

• Manufacturer Part Number: HD64F2318VTE25
• Description: IC H8S MCU FLASH 256K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of HD64F2318VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Table 17.36 Programmer Mode Commands
Memory read mode
Auto-program mode
Auto-erase mode
Status read mode
Legend:
RA: Read address
PA: Program address
×:
Notes: 1. In auto-program mode, 129 cycles are required for command writing by a simultaneous
17.20.4 Memory Read Mode
• After the end of an auto-program, auto-erase, or status read operation, the command wait state
• Command writes can be performed in memory read mode, just as in the command wait state.
• Once memory read mode has been entered, consecutive reads can be performed.
• After power-on, memory read mode is entered.
Command Name
is entered. To read memory contents, a transition must be made to memory read mode by
means of a command write before the read is executed.
Don’t care
2. In memory read mode, the number of cycles depends on the number of address write
128-byte write.
cycles (n).
1 + n
129
2
2
Number
of Cycles
Write
Write
Mode
Write
Write
1st Cycle
×
×
×
×
Address Data
Rev.7.00 Feb. 14, 2007 page 673 of 1108
H'00
H'40
H'20
H'71
Read
Write
Write
Write
Mode
2nd Cycle
RA
PA
Address Data
×
×
REJ09B0089-0700
Section 17 ROM
Dout
Din
H'20
H'71