HD64F2318VTE25 Renesas Electronics America, HD64F2318VTE25 Datasheet - Page 41
HD64F2318VTE25
Manufacturer Part Number
HD64F2318VTE25
Description
IC H8S MCU FLASH 256K 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Specifications of HD64F2318VTE25
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
71
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
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Item
Other features
Specification
•
Differences between H8S/2319 F-ZTAT and H8S/2319C F-ZTAT
⎯ On-chip RAM
⎯ On-chip flash memory
⎯ Address map
H8S/2319 F-ZTAT: 8 kbytes (H'FFDC00 to H'FFFBFF)
H8S/2319C F-ZTAT: 16 kbytes (H'FFBC00 to H'FFFBFF)
The H8S/2319 F-ZTAT and H8S/2319C F-ZTAT both have 512 kbytes
of on-chip flash memory. However, the method for controlling the flash
memory is different for the two LSIs. When the on-chip flash memory
is enabled, the registers (parameters) used to control it are different.
For details, see the section about the H8S/2319 F-ZTAT and
H8S/2319C F-ZTAT in section 17, ROM.
The address maps of the H8S/2319 F-ZTAT and H8S/2319C F-ZTAT
differ in places. For details, see section 3.5, Memory Map in Each
Operating Mode.
Rev.7.00 Feb. 14, 2007 page 7 of 1108
Section 1 Overview
REJ09B0089-0700
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