HD64F2318VTE25 Renesas Electronics America, HD64F2318VTE25 Datasheet - Page 772

• Manufacturer Part Number: HD64F2318VTE25
• Description: IC H8S MCU FLASH 256K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of HD64F2318VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 17 ROM
17.25
There are three kinds of flash memory program/erase protection: hardware, software protection,
and error protection.
17.25.1 Hardware Protection
Programming and erasing of flash memory is forcibly disabled or suspended by hardware
protection. In this state, the downloading of an on-chip program and initialization of the flash
memory are possible. However, an activated program for programming or erasure cannot program
or erase locations in a user MAT, and the error in programming/erasing is reported in the
parameter FPFR.
Table 17.54 Hardware Protection
Item
Reset/standby
protection
Rev.7.00 Feb. 14, 2007 page 738 of 1108
REJ09B0089-0700
Protection
Description
•
•
A power-on reset (including a power-
on reset by the WDT) and entry to
standby mode reinitialize the
program/erase interface register and
the device enters a program/erase-
protected state.
Resetting by means of the RES pin
after power is initially supplied will not
make the device enter the reset state
unless the RES pin is held low until
oscillation has stabilized. In the case
of a reset during operation, hold the
RES pin low for the RES pulse width
that is specified in the section on AC
characteristics section. If the device is
reset during programming or erasure,
data values in the flash memory are
not guaranteed. In this case, after
keeping the RES pin low for at least
100 μs, execute erasure and then
execute programming again.
Download
Yes
Function to Be Protected
Yes
Program/Erase