HD64F2318VTE25 Renesas Electronics America, HD64F2318VTE25 Datasheet - Page 641

IC H8S MCU FLASH 256K 100-QFP

HD64F2318VTE25

Manufacturer Part Number
HD64F2318VTE25
Description
IC H8S MCU FLASH 256K 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of HD64F2318VTE25

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
71
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Notes: 1. When the RAMS bit is set to 1, program/erase protection is enabled for all blocks
17.10
All interrupts, including NMI input, are disabled when flash memory is being programmed or
erased (when the P or E bit is set in FLMCR1), and while the boot program is executing in boot
mode *
1. Interrupt during programming or erasing might cause a violation of the programming or
2. In the interrupt exception handling sequence during programming or erasing, the vector would
3. If an interrupt occurred during boot program execution, it would not be possible to execute the
For these reasons, in on-board programming mode alone there are conditions for disabling
interrupts, as an exception to the general rule. However, this provision does not guarantee normal
erasing and programming or MCU operation. All interrupt requests, including NMI, must
therefore be restricted inside and outside the MCU when programming or erasing flash memory.
The NMI interrupt is also disabled in the error-protection state while the P or E bit remains set in
FLMCR1.
Notes: 1. Interrupt requests must be disabled inside and outside the MCU until the programming
erasing algorithm, with the result that normal operation could not be assured.
not be read correctly *
normal boot mode sequence.
1
, to give priority to the program or erase operation. There are three reasons for this:
2. A RAM area cannot be erased by execution of software in accordance with the erase
3. Block area EB0 includes the vector table. When performing RAM emulation, the
2. The vector may not be read correctly in this case for the following two reasons:
Interrupt Handling when Programming/Erasing Flash Memory
regardless of the value of RAM2, RAM1, and RAM0 (emulation protection). In this
state, setting the P or E bit in flash memory control register 1 (FLMCR1) will not cause
a transition to program mode or erase mode. When actually programming a flash
memory area, the RAMS bit should be cleared to 0.
algorithm while flash memory emulation in RAM is being used.
vector table is needed by the overlap RAM.
control program has completed programming.
If flash memory is read while being programmed or erased (while the P or E bit is
set in FLMCR1), correct read data will not be obtained (undetermined values will
be returned).
If the interrupt entry in the vector table has not been programmed yet, interrupt
exception handling will not be executed correctly.
2
, possibly resulting in MCU runaway.
Rev.7.00 Feb. 14, 2007 page 607 of 1108
REJ09B0089-0700
Section 17 ROM

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