DF61654N50FTV Renesas Electronics America, DF61654N50FTV Datasheet - Page 891

• Manufacturer Part Number: DF61654N50FTV
• Description: IC H8SX/1654 MCU FLASH 120TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8SX/1600r

Specifications of DF61654N50FTV

• Core Processor: H8SX
• Core Size: 32-Bit
• Speed: 50MHz
• Connectivity: I²C, IrDA, SCI, SmartCard, USB
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 75
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 40K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 120-TQFP, 120-VQFP
• For Use With: HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)3DK1657 - DEV EVAL KIT FOR H8SX/1657
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

20.12
1. The initial state of the product at its shipment is in the erased state. For the product whose
2. For the PROM programmer suitable for programmer mode in this LSI and its program version,
3. If the socket, socket adapter, or product index does not match the specifications, too much
4. Use a PROM programmer that supports the device with 512-kbyte on-chip flash memory and
5. Do not remove the chip from the PROM programmer nor input a reset signal during
6. The flash memory is not accessible until FKEY is cleared after programming/erasing starts. If
7. At powering on or off the Vcc power supply, fix the RES pin to low and set the flash memory
8. In on-board programming mode or programmer mode, programming of the 128-byte
9. When the chip is to be reprogrammed with the programmer after execution of programming or
10. To program the flash memory, the program data and program must be allocated to addresses
11. The programming program that includes the initialization routine and the erasing program that
revision of erasing is undefined, we recommend to execute automatic erasure for checking the
initial state (erased state) and compensating.
refer to the instruction manual of the socket adapter.
current flows and the product may be damaged.
3.3-V programming voltage. Use only the specified socket adapter.
programming/erasing in which a high voltage is applied to the flash memory. Doing so may
damage the flash memory permanently. If a reset is input accidentally, the reset must be
released after the reset input period of at least 100µs.
the operating mode is changed and this LSI is restarted by a reset immediately after
programming/erasing has finished, secure the reset input period (period of RES = 0) of at least
100µs. Transition to the reset state during programming/erasing is inhibited. If a reset is input
accidentally, the reset must be released after the reset input period of at least 100µs.
to hardware protection state. This power on/off timing must also be satisfied at a power-off and
power-on caused by a power failure and other factors.
programming-unit block must be performed only once. Perform programming in the state
where the programming-unit block is fully erased.
erasure in on-board programming mode, it is recommended that automatic programming is
performed after execution of automatic erasure.
which are higher than those of the external interrupt vector table and H'FF must be written to
all the system reserved areas in the exception handling vector table.
includes the initialization routine are each 4 kbytes or less. Accordingly, when the CPU clock
frequency is 35 MHz, the download for each program takes approximately 60 µs at the
maximum.
Usage Notes
Section 20 Flash Memory (0.18-µm F-ZTAT Version)
Rev.1.00 Sep. 08, 2005 Page 841 of 966
REJ09B0219-0100