DF2211NP24V Renesas Technology / Hitachi Semiconductor, DF2211NP24V Datasheet - Page 178

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DF2211NP24V

Manufacturer Part Number
DF2211NP24V
Description
H8S/2200 Series, 2212 Group, USB, RTC, HSS TNP-64B; Vcc= 2.7 to 3.6 volts, Temp= -20 to 75 C; Package: PVQN0064LB-A
Manufacturer
Renesas Technology / Hitachi Semiconductor
Datasheet
6.3.4
BCRH selects enabling or disabling of idle cycle insertion, and the memory interface for area 0.
This register should be set initial value and not be modified in the H8S/2212 Group.
Rev.7.00 Dec. 24, 2008 Page 124 of 698
REJ09B0074-0700
Bit
7
6
5
4
3
2 to
0
Bit Name
ICIS1
ICIS0
BRSTRM
BRSTS1
BRSTS0
Bus Control Register H (BCRH)
Initial Value R/W
1
1
0
1
0
All 0
R/W
R/W
R/W
R/W
R/W
R/W
Description
Idle Cycle Insert 1:
Selects whether or not one idle cycle state is to be
inserted between bus cycles when successive external
read cycles are performed in different areas.
0: Idle cycle not inserted in case of successive external
1: Idle cycle inserted in case of successive external read
Idle Cycle Insert 0:
Selects whether or not one idle cycle state is to be
inserted between bus cycles when successive external
read and write cycles are performed.
0: Idle cycle not inserted in case of successive external
1: Idle cycle inserted in case of successive external read
Burst ROM enable:
Selects whether area 0 is used as a burst ROM interface.
0: Area 0 is basic bus interface
1: Area 0 is burst ROM interface
Burst Cycle Select 1:
Selects the number of burst cycles for the burst ROM
interface.
0: Burst cycle comprises 1 state
1: Burst cycle comprises 2 states
Burst Cycle Select 0:
Selects the number of words that can be accessed in a
burst ROM interface burst access.
0: Max. 4 words in burst access
1: Max. 8 words in burst access
Reserved
The write value should always be 0.
read cycles in different areas
cycles in different areas
read and write cycles
and write cycles

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