DF2211NP24V Renesas Technology / Hitachi Semiconductor, DF2211NP24V Datasheet - Page 610

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DF2211NP24V

Manufacturer Part Number
DF2211NP24V
Description
H8S/2200 Series, 2212 Group, USB, RTC, HSS TNP-64B; Vcc= 2.7 to 3.6 volts, Temp= -20 to 75 C; Package: PVQN0064LB-A
Manufacturer
Renesas Technology / Hitachi Semiconductor
Datasheet
Rev.7.00 Dec. 24, 2008 Page 556 of 698
REJ09B0074-0700
This LSI
This LSI
Application program
preprogramming
Flash memory
Flash memory
Flash memory
1. Initial state
3. Flash memory initialization
Boot program
Boot program
(old version)
The old program version or data remains written
in the flash memory. The user should prepare the
programming control program and new
application program beforehand in the host.
The erase program in the boot program area (in
RAM) is executed, and the flash memory is
initialized (to H'FF). In boot mode, total flash
memory erasure is performed, without regard to
blocks.
erase
Programming control
New application
New application
program
program
program
Host
Host
Programming control
Boot program area
program
RAM
RAM
Figure 17.3 Boot Mode (Sample)
or USB
or USB
SCI
SCI
2. Programming control program transfer
4. Writing new application program
When boot mode is entered, the boot program in
this LSI (originally incorporated in the chip) is
started and the programming control program in
the host is transferred to RAM via SCI or USB
communication. The boot program required for
flash memory erasing is automatically transferred
to the RAM boot program area.
The programming control program transferred
from the host to RAM is executed, and the new
application program in the host is written into the
flash memory.
This LSI
This LSI
Application program
New application
Flash memory
Flash memory
Boot program
Boot program
(old version)
program
New application
program
Host
Host
Programming control
Programming control
Boot program area
Boot program area
Program execution state
program
program
RAM
RAM
or USB
or USB
SCI
SCI

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