DF2211NP24V Renesas Technology / Hitachi Semiconductor, DF2211NP24V Datasheet - Page 630

• Manufacturer Part Number: DF2211NP24V
• Description: H8S/2200 Series, 2212 Group, USB, RTC, HSS TNP-64B; Vcc= 2.7 to 3.6 volts, Temp= -20 to 75 C; Package: PVQN0064LB-A
• Manufacturer: Renesas Technology / Hitachi Semiconductor

17.6.3
On-board programming/erasing of an individual flash memory block can also be performed in user
program mode by branching to a user program/erase control program. The user must set branching
conditions and provide on-board FWE control and supply of programming data, and storing a
program/erase control program in part of the program area as necessary. The flash memory must
contain the user program/erase control program or a program which provides the user
program/erase control program from external memory. Because the flash memory itself cannot be
read during programming/erasing, transfer the user program/erase control program to on-chip
RAM, as like in boot mode. Figure 17.10 shows a sample procedure for programming/erasing in
user program mode. Prepare a user program/erase control program in accordance with the
description in section 17.8, Flash Memory Programming/Erasing.
Rev.7.00 Dec. 24, 2008 Page 576 of 698
REJ09B0074-0700
Figure 17.10 Programming/Erasing Flowchart Example in User Program Mode
Programming/Erasing in User Program Mode
control pogram (flash memory rewrite)
MD2 to MD0 = 110,111 Reset start
Branch to user program/erase
Transfer user program /erase
Execute user program/erase
Branch to flash memory
control program to RAM
application program
Program/erase?
control in RAM
Yes
No
Branch to flash memory
application program