DF2211NP24V Renesas Technology / Hitachi Semiconductor, DF2211NP24V Datasheet - Page 632

• Manufacturer Part Number: DF2211NP24V
• Description: H8S/2200 Series, 2212 Group, USB, RTC, HSS TNP-64B; Vcc= 2.7 to 3.6 volts, Temp= -20 to 75 C; Package: PVQN0064LB-A
• Manufacturer: Renesas Technology / Hitachi Semiconductor

An example in which flash memory block area EB0 is overlapped is shown in Figure 17.12.
1. The RAM area to be overlapped is fixed at a 1-kbyte area in the range of H'FFD000 to
2. The flash memory area to overlap is selected by RAMER from a 1-kbyte area among one of
3. The overlapped RAM area can be accessed from both the flash memory addresses and RAM
4. When the RAMS bit in RAMER is set to 1, program/erase protection is enabled for all flash
5. A RAM area cannot be erased by execution of software in accordance with the erase algorithm.
6. Block area EB0 contains the vector table. When performing RAM emulation, the vector table
Rev.7.00 Dec. 24, 2008 Page 578 of 698
REJ09B0074-0700
H'FFD3FF.
the EB0 to EB3 blocks.
addresses.
memory blocks (emulation protection). In this state, setting the P1 or E1 bit in FLMCR1 to 1
does not cause a transition to program mode or erase mode.
is needed in the overlap RAM.
H'000000
H'000400
H'000800
H'000C00
H'FFC000
H'FFD000
H'FFD3FF
H'FFD400
H'FFEFBF
H'FFFFC0
H'FFFFFF
Figure 17.12 Example of RAM Overlap Operation
On-chip RAM (64 bytes)
Normal memory map
(7 kbytes - 64 bytes)
Flash memory
On-chip RAM
On-chip RAM
On-chip RAM
(4 kbytes)
(1 kbyte)
(EB0)
(EB1)
(EB2)
RAM overlap memory map
On-chip RAM (64 bytes)
(7 kbytes - 64 bytes)
(1-kbyte shadow)
Flash memory
Flash memory
On-chip RAM
On-chip RAM
On-chip RAM
On-chip RAM
(4 kbytes)
(1 kbyte)
(EB0)
(EB2)