DF2211NP24V Renesas Technology / Hitachi Semiconductor, DF2211NP24V Datasheet - Page 737

• Manufacturer Part Number: DF2211NP24V
• Description: H8S/2200 Series, 2212 Group, USB, RTC, HSS TNP-64B; Vcc= 2.7 to 3.6 volts, Temp= -20 to 75 C; Package: PVQN0064LB-A
• Manufacturer: Renesas Technology / Hitachi Semiconductor

22.7
Table 22.10 lists the flash memory characteristics.
Table 22.10 Flash Memory Characteristics
Conditions: V
Item
Programming time*
Erase time*
Reprogramming count
Data retention time*
Programming Wait time after PSU1 bit setting*
Common
Erase
Notes: 1. Make each time setting in accordance with the program/program-verify flowchart or
2. Programming time per 128 bytes (Shows the total period for which the P-bit in the flash
Flash Memory Characteristics
1
*
erase/erase-verify flowchart.
memory control register (FLMCR1) is set. It does not include the programming
verification time.)
3
V
T
*
Wait time after P1 bit setting*
Wait time after P1 bit clear*
Wait time after PSU1 bit clear*
Wait time after PV1 bit setting*
Wait time after H’FF dummy write*
Wait time after PV1 bit clear*
Maximum programming count*
Wait time after SWE1 bit setting*
Wait time after SWE1 bit clear*
Wait time after ESU1 bit setting*
Wait time after E1 bit setting*
Wait time after E1 bit clear*
Wait time after ESU1 bit clear*
Wait time after EV1 bit setting*
Wait time after H'FF dummy write*
Wait time after EV1 bit clear*
Maximum erase count*
5
a
CC
SS
= –20 to +75°C (Programming/erasing operating temperature range)
1
= PLLV
8
= PLLV
*
2
*
4
SS
CC
= DrV
= DrV
1
SS
CC
*
5
= 0 V,
= 3.0 V to 3.6 V, Vref = 2.7 V to V
1
1
1
1
1
1
*
*
1
1
1
1
1
1
4
5
*
1
1
1
4
1
1
Symbol
t
t
N
t
y
z0
z1
z2
α
β
γ
ε
η
N1
N2
x
θ
y
z
α
β
γ
ε
η
N
P
E
DRP
WEC
Rev.7.00 Dec. 24, 2008 Page 683 of 698
Min.
—
—
100*
10
50
28
198
8
5
5
4
2
2
—
—
1
100
100
10
10
10
20
2
4
—
6
Typ.
10
50
10000*
—
50
30
200
10
5
5
4
2
2
—
—
1
100
100
10
10
10
20
2
4
—
7
CC
,
Max.
200
1000
—
—
—
32
202
12
—
—
—
—
—
6*
994*
—
—
—
100
—
—
—
—
—
100
4
REJ09B0074-0700
4
Unit
ms/128 bytes
ms/block
Times
Years
µs
µs
µs
µs
µs
µs
µs
µs
µs
Times
Times
µs
µs
µs
ms
µs
µs
µs
µs
µs
Times