DF2211NP24V Renesas Technology / Hitachi Semiconductor, DF2211NP24V Datasheet - Page 607

• Manufacturer Part Number: DF2211NP24V
• Description: H8S/2200 Series, 2212 Group, USB, RTC, HSS TNP-64B; Vcc= 2.7 to 3.6 volts, Temp= -20 to 75 C; Package: PVQN0064LB-A
• Manufacturer: Renesas Technology / Hitachi Semiconductor

The features of the on-chip flash memory are summarized below. The block diagram of the flash
memory is shown in figure 17.1.
17.1
• Size:
• Programming/erase methods
• Reprogramming capability
• Two flash memory operating modes
Product Class
H8S/2218 Group
H8S/2212 Group
⎯ The flash memory is programmed 128 bytes at a time. Erase is performed in single-block
⎯ Flash memory can be reprogrammed a minimum of 100 times.
⎯ Boot mode
⎯ User program mode
units. The flash memory is configured as follows: 32 kbytes × 2 blocks, 28 kbytes × 1
block, 16 kbytes × 8 blocks, 8 kbytes × 1 block, and 1 kbyte × 4 blocks. To erase the entire
flash memory, each block must be erased in turn.
SCI boot mode: HD64F2218, HD64F2212, and HD64F2211
USB boot mode: HD64F2218U, HD64F2218CU, HD64F2217CU, HD64F2212U,
HD64F2212CU, HD64F2211U, HD64F2211CU and HD64F2210CU
On-board programming/erasing can be done in boot mode in which the boot program built
into the chip is started for erase or programming of the entire flash memory. In normal user
program mode, individual blocks can be erased or programmed.
Features
Section 17 Flash Memory (F-ZTAT Version)
HD64F2218, HD64F2218U
HD64F2212, HD64F2212U
HD64F2218CU
HD64F2217CU
HD64F2212CU
HD64F2211, HD64F2211U
HD64F2211CU
HD64F2210CU
ROM Size
128 kbytes
64 kbytes
128 kbytes
64 kbytes
32 kbytes
Rev.7.00 Dec. 24, 2008 Page 553 of 698
ROM Address
H'000000 to H'01FFFF
(Modes 6 and 7)
H'000000 to H'00FFFF
(Modes 6 and 7)
H'000000 to H'01FFFF
(Mode 7)
H'000000 to H'00FFFF
(Mode 7)
H'000000 to H'007FFF
(Mode 7)
REJ09B0074-0700