DF2345TE20 Renesas Electronics America, DF2345TE20 Datasheet - Page 10

• Manufacturer Part Number: DF2345TE20
• Description: MCU 5V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2345TE20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2345TE20; HD64F2345TE20

Rev. 4.00 Feb 15, 2006 page viii of xxiv
Item
20.1.6 Flash Memory
Characteristics
Table 20.10 Flash
Memory Characteristics
Appendix G Package
Dimensions
Figure G.1 TFP-100B
Package Dimensions
Figure G.2 TFP-100G
Package Dimensions
Figure G.3 FP-100A
Package Dimensions
Figure G.4 FP-100B
Package Dimensions
Page
648
649
897
898
899
900
Revision (See Manual for Details)
Table 20.10 amended
Notes 7 to 9 amended
Notes: 7. Minimum number of times for which all characteristics
are guaranteed after rewriting. (Guarantee range is 1 to
minimum value.)
8. Reference value for 25°C (as a guideline, rewriting should
normally function up to this value).
9. Data retention characteristic when rewriting is performed
within the specification range, including the minimum value.
Figure G.1 replaced
Figure G.2 replaced
Figure G.3 replaced
Figure G.4 replaced
Item
Programming time *
Erase time *
Reprogramming count
Data retention time *
Programming Wait time after setting SWE bit *
1
*
3
*
5
1
9
*
2
*
4
1
Symbol
t
t
N
t
x
P
E
DRP
WEC
Min
—
—
100 *
10
10
7
Typ
10
100
10,000 *
—
—
8
Max
200
1200
—
—
—
ms/block
Unit
ms/
32 bytes
Times
Years
s
Test
Conditions