DF2345TE20 Renesas Electronics America, DF2345TE20 Datasheet - Page 594

MCU 5V 128K 100-TQFP

DF2345TE20

Manufacturer Part Number
DF2345TE20
Description
MCU 5V 128K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet

Specifications of DF2345TE20

Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
71
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2345TE20
HD64F2345TE20

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2345TE20V
Manufacturer:
Renesas
Quantity:
222
Part Number:
DF2345TE20V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 17 ROM
17.7.3
EBR1 and EBR2 are registers that specify the flash memory erase area block by block; bits 1 and
2 in EBR1 and bits 7 to 0 in EBR2 are readable/writable bits. EBR1 and EBR2 are each initialized
to H'00 by a reset, in hardware standby mode and software standby mode, when a low level is
input to the FWE pin, and when a high level is input to the FWE pin and the SWE bit in FLMCR1
is cleared to 0. When a bit in EBR1 or EBR2 is set, the corresponding block can be erased. Other
blocks are erase-protected. Blocks are erased separately (in one-block units), so set only one bit in
EBR1 or EBR2 (more than one bit cannot be set to 1). To erase all blocks, erase one block at a
time, once after another in sequence. Then on-chip flash memory is disabled (modes 4 and 5), a
read with return H'00, and writes are disabled.
The flash memory block configuration is shown in table 17.12.
Table 17.12 Flash Memory Erase Blocks
Block (Size)
EB0 (1 kbyte)
EB1 (1 kbyte)
EB2 (1 kbyte)
EB3 (1 kbyte)
EB4 (28 kbytes)
EB5 (16 kbytes)
EB6 (8 kbytes)
EB7 (8 kbytes)
EB8 (32 kbytes)
EB9 (32 kbytes)
Rev. 4.00 Feb 15, 2006 page 568 of 900
REJ09B0291-0400
Bit
EBR1
Initial value
Read/Write
Bit
EBR2
Initial value
Read/Write
Erase Block Registers 1 and 2 (EBR1, EBR2)
R/W
EB7
7
0
7
0
Address
H'000000 to H'0003FF
H'000400 to H'0007FF
H'000800 to H'000BFF
H'000C00 to H'000FFF
H'001000 to H'007FFF
H'008000 to H'00BFFF
H'00C000 to H'00DFFF
H'00E000 to H'00FFFF
H'010000 to H'017FFF
H'018000 to H'01FFFF
R/W
EB6
6
0
6
0
R/W
EB5
5
0
5
0
R/W
EB4
4
0
4
0
R/W
EB3
3
0
3
0
R/W
EB2
2
0
2
0
R/W
R/W
EB9
EB1
1
0
1
0
R/W
R/W
EB8
EB0
0
0
0
0

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