DF2345TE20 Renesas Electronics America, DF2345TE20 Datasheet - Page 578

• Manufacturer Part Number: DF2345TE20
• Description: MCU 5V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2345TE20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2345TE20; HD64F2345TE20

Section 17 ROM
Table 17.8 AC Characteristics in PROM Mode
Item
Address setup time
OE setup time
Data setup time
Address hold time
Data hold time
Data output disable time
V
Programming pulse width
PGM pulse width for overwrite programming t
V
CE setup time
Data output delay time
Notes: 1. Input pulse level: 0.8 V to 2.2 V
Rev. 4.00 Feb 15, 2006 page 552 of 900
REJ09B0291-0400
PP
CC
setup time
setup time
2. t
3. t
Input rise time and fall time
Timing reference levels: Input: 1.0 V, 2.0 V
longer be referenced.
DF
OPW
(When V
is defined to be when output has reached the open state, and the output level can no
is defined by the value shown in the flowchart.
CC
= 6.0 V ± 0.25 V, V
Output: 0.8 V, 2.0 V
20 ns
PP
Symbol
t
t
t
t
t
t
t
t
t
t
t
AS
OES
DS
AH
DH
DF
VPS
PW
OPW
VCS
CES
OE
= 12.5 V ± 0.3 V, T
*
2
*
3
Min
2
2
2
0
2
—
2
0.19
0.19
2
2
0
Typ
—
—
—
—
—
—
—
0.20
—
—
—
—
a
= 25°C ± 5°C)
Max
—
—
—
—
—
130
—
0.21
5.25
—
—
150
Unit
µs
µs
µs
µs
µs
ns
µs
ms
ms
µs
µs
ns
Test
Conditions
Figure 17.5 *
1