DF2345TE20 Renesas Electronics America, DF2345TE20 Datasheet - Page 675

• Manufacturer Part Number: DF2345TE20
• Description: MCU 5V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2345TE20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2345TE20; HD64F2345TE20

4. Write time maximum value (t
5. Number of times when the wait time after P bit setting (z) = 200 µs.
6. For the maximum erase time (t
number of programmings (N)).
The maximum number of writes (N) should be set according to the actual set value of z
so as not to exceed the maximum programming time (t
wait time after E bit setting (z) and the maximum number of erases (N):
t
The values of z and N should be set so as to satisfy the above formula.
E
(max) = Wait time after E bit setting (z)
Examples: When z = 5 [ms], N = 240 times
When z = 10 [ms], N = 120 times
P
(max.) = wait time after P bit setting (z)
E
(max)), the following relationship applies between the
maximum number of erases (N)
Rev. 4.00 Feb 15, 2006 page 649 of 900
Section 20 Electrical Characteristics
P
(max)).
REJ09B0291-0400
maximum