DF2345TE20 Renesas Electronics America, DF2345TE20 Datasheet - Page 693

• Manufacturer Part Number: DF2345TE20
• Description: MCU 5V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2345TE20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2345TE20; HD64F2345TE20

20.3.3
The bus timing is shown below.
Basic Bus Timing (Two-State Access): Figure 20.11 shows the basic bus timing for external two-
state access.
Basic Bus Timing (Three-State Access): Figure 20.12 shows the basic bus timing for external
three-state access.
Basic Bus Timing (Three-State Access with One Wait State): Figure 20.13 shows the basic bus
timing for external three-state access with one wait state.
Burst ROM Access Timing (Two-State Access): Figure 20.14 shows the burst ROM access
timing for two-state access.
Burst ROM Access Timing (One-State Access): Figure 20.15 shows the burst ROM access
timing for one-state access.
External Bus Release Timing: Figure 20.16 shows the external bus release timing.
Bus Timing
NMI
IRQi
(i = 0 to 2)
IRQ
Edge input
IRQ
Level input
Figure 20.10 Interrupt Input Timing
t
t
t
NMIS
IRQS
IRQS
t
t
NMIW
IRQW
Rev. 4.00 Feb 15, 2006 page 667 of 900
t
t
NMIH
IRQH
Section 20 Electrical Characteristics
REJ09B0291-0400