DF2345TE20 Renesas Electronics America, DF2345TE20 Datasheet - Page 605

• Manufacturer Part Number: DF2345TE20
• Description: MCU 5V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2345TE20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2345TE20; HD64F2345TE20

17.9
In the on-board programming modes, flash memory programming and erasing is performed by
software, using the CPU. There are four flash memory operating modes: program mode, erase
mode, program-verify mode, and erase-verify mode. Transitions to these modes can be made by
setting the PSU and ESU bits in FLMCR2, and the P, E, PV, and EV bits in FLMCR1. Refer to
figure 17.20 regarding mode transitions using the settings of the bits in FLMCR1 and FLMCR2.
The flash memory cannot be read while being programmed or erased. Therefore, the program that
controls flash memory programming/erasing (the programming control program) should be
located and executed in on-chip RAM or external memory.
Notes: 1. Operation is not guaranteed if setting/resetting of the SWE, EV, PV, E, and P bits in
2. When programming or erasing, set FWE to 1 (programming/erasing will not be
3. Perform programming in the erased state. Do not perform additional programming on
Programming/Erasing Flash Memory
FLMCR1, and the ESU and PSU bits in FLMCR2, is executed by a program in flash
memory.
executed if FWE = 0).
previously programmed addresses.
Rev. 4.00 Feb 15, 2006 page 579 of 900
REJ09B0291-0400
Section 17 ROM