DF2345TE20 Renesas Electronics America, DF2345TE20 Datasheet - Page 622

• Manufacturer Part Number: DF2345TE20
• Description: MCU 5V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2345TE20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2345TE20; HD64F2345TE20

Section 17 ROM
Table 17.22 DC Characteristics in Writer Mode
Conditions: V
Item
Input high-level
voltage
Input low-level
voltage
Schmitt trigger
input voltage
Output high-level
voltage
Output low-level
voltage
Input leak current FO
V
Note: Refer to the maximum rating for the F-ZTAT version “20.1.1 Absolute Maximum Ratings.”
17.13.4 Memory Read Mode
Rev. 4.00 Feb 15, 2006 page 596 of 900
REJ09B0291-0400
CC
After the end of an auto-program, auto-erase, or status read operation, the command wait state
is entered. To read memory contents, a transition must be made to memory read mode by
means of a command write before the read is executed.
Command writes can be performed in memory read mode, just as in the command wait state.
Once memory read mode has been entered, consecutive reads can be performed.
After power-on, memory read mode is entered.
current
If the maximum rating is exceeded, the LSI may be damaged permanently.
CC
= 5.0 V ±10%, V
FO
FO
OE, CE, WE
FO
FO
During read
During programming I
During erasing
7
7
7
7
7
–FO
–FO
–FO
–FO
–FO
0
0
0
0
0
, FA
, FA
, FA
16
16
16
–FA
–FA
–FA
SS
= 0 V, T
0
0
0
Symbol
V
V
V
V
V
V
V
| I
I
I
CC
CC
CC
IH
IL
T–
T+
T+
OH
OL
LI
a
–V
|
= 25°C ±5°C
T–
Min
2.2
0.3
1.0
2.0
0.4
V
—
—
—
—
—
CC
– 0.5 —
Typ
—
—
—
—
—
—
—
60
70
70
Max
V
0.8
2.5
3.5
—
—
0.4
2
89
89
89
CC
+ 0.3 V
Unit
V
V
V
V
V
V
µA
mA
mA
mA
Test
Conditions
I
I
OH
OL
= 1.6 mA
= –200 µA