DF2345TE20 Renesas Electronics America, DF2345TE20 Datasheet - Page 581

• Manufacturer Part Number: DF2345TE20
• Description: MCU 5V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2345TE20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2345TE20; HD64F2345TE20

17.6
17.6.1
The features of the flash memory are summarized below.
Four flash memory operating modes
Programming/erase methods
The flash memory is programmed 32 bytes at a time. Erasing is performed by block erase (in
single-block units). When erasing multiple blocks, the individual blocks must be erased
sequentially. Block erasing can be performed as required on 1-kbyte, 8-kbyte, 16-kbyte, 28-
kbyte, and 32-kbyte blocks.
Programming/erase times (5 V version)
The flash memory programming time is 10 ms (typ.) for simultaneous 32-byte programming,
equivalent to 300 µs (typ.) per byte, and the erase time is 100 ms (typ.) per block.
Reprogramming capability
The flash memory can be reprogrammed up to 100 times.
On-board programming modes
There are two modes in which flash memory can be programmed/erased/verified on-board:
Automatic bit rate adjustment
With data transfer in boot mode, the bit rate of the H8S/2345 Group chip can be automatically
adjusted to match the transfer bit rate of the host. (9600 bps, 4800 bps)
Flash memory emulation by RAM
Part of the RAM area can be overlapped onto flash memory, to emulate flash memory updates
in real time.
Program mode
Erase mode
Program-verify mode
Erase-verify mode
Boot mode
User program mode
Overview of Flash Memory
Features
Rev. 4.00 Feb 15, 2006 page 555 of 900
REJ09B0291-0400
Section 17 ROM