DF2345TE20 Renesas Electronics America, DF2345TE20 Datasheet - Page 577

• Manufacturer Part Number: DF2345TE20
• Description: MCU 5V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2345TE20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2345TE20; HD64F2345TE20

Table 17.7 DC Characteristics in PROM Mode
Item
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage
current
V
V
CC
PP
current
current
(When V
EO
EA
OE, CE, PGM
EO
EA
OE, CE, PGM
EO
EO
EO
EA
OE, CE, PGM
CC
= 6.0 V ± 0.25 V, V
16
16
16
7
7
7
7
7
to EO
to EO
to EO
to EO
to EO
to EA
to EA
to EA
0
0
0
0
0
0
0
0
,
,
,
,
,
,
Symbol Min
V
V
V
V
| I
I
I
CC
PP
IH
IL
OH
OL
LI
|
PP
= 12.5 V ± 0.3 V, V
2.4
–0.3
2.4
—
—
—
—
Rev. 4.00 Feb 15, 2006 page 551 of 900
Typ
—
—
—
—
—
—
—
Max
V
0.8
—
0.45
2
40
40
CC
SS
+ 0.3
= 0 V, T
Unit
V
V
V
V
µA
mA
mA
a
= 25°C ± 5°C)
REJ09B0291-0400
Section 17 ROM
Test
Conditions
I
I
V
5.25 V/0.5 V
OH
OL
in
= 1.6 mA
= –200 µA
=