DF2345TE20 Renesas Electronics America, DF2345TE20 Datasheet - Page 674

• Manufacturer Part Number: DF2345TE20
• Description: MCU 5V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2345TE20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2345TE20; HD64F2345TE20

Section 20 Electrical Characteristics
20.1.6
Table 20.10 lists the flash memory characteristics.
Table 20.10 Flash Memory Characteristics
Conditions: V
Notes: 1. Time settings should be made in accordance with the programming/erase algorithm.
Rev. 4.00 Feb 15, 2006 page 648 of 900
REJ09B0291-0400
Item
Programming time *
Erase time *
Reprogramming count
Programming Wait time after setting SWE bit *
Erase
2. Programming time per 32 bytes. (Indicates the total time the P bit in the flash memory
3. Time to erase one block. (Indicates the total time the E bit in FLMCR1 is set. The erase
Flash Memory Characteristics
1
control register 1 (FLMCR1) is set. The program verification time is not included.)
verification time is not included.)
*
3
programming/erase operating temperature range; regular specifications),
T
wide-range specifications)
*
Wait time after setting PSU bit *
Wait time after setting P bit *
Wait time after clearing P bit *
Wait time after clearing PSU bit *
Wait time after setting PV bit *
Wait time after H'FF dummy write *
Wait time after clearing PV bit *
Max. number of programmings *
Wait time after setting SWE bit *
Wait time after setting ESU bit *
Wait time after setting E bit *
Wait time after clearing E bit *
Wait time after clearing ESU bit *
Wait time after setting EV bit *
Wait time after H'FF dummy write *
Wait time after clearing EV bit *
Max. number of erases *
5
a
CC
= 0 to +85°C (flash memory programming/erase operating temperature range;
1
= AV
*
2
*
4
CC
= 4.5 to 5.5 V, V
1
*
6
1
1
*
*
1
1
1
1
4
6
1
1
1
1
1
1
1
1
1
*
SS
4
1
1
= AV
Symbol
t
t
N
x
y
z
N
x
y
z
N
P
E
WEC
SS
= 0 V, T
Min
—
—
—
10
50
150
10
10
4
2
4
—
10
200
5
10
10
20
2
5
120
a
Typ
10
100
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
= 0 to +75°C (flash memory
Max
200
1200
100
—
—
200
—
—
—
—
—
1000 *
—
—
10
—
—
—
—
—
240
5
ms/block
Unit
ms/
32 bytes
Times
Times
Times
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
Test
Conditions
z = 200 s