DF2345TE20 Renesas Electronics America, DF2345TE20 Datasheet - Page 597

MCU 5V 128K 100-TQFP

DF2345TE20

Manufacturer Part Number
DF2345TE20
Description
MCU 5V 128K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet

Specifications of DF2345TE20

Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
71
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2345TE20
HD64F2345TE20

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2345TE20V
Manufacturer:
Renesas
Quantity:
222
Part Number:
DF2345TE20V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Table 17.13 Flash Memory Area Divisions
Notes: To use RAM for flash memory emulation, set the RAME bit of SYSCR to 1.
Addresses
H'FFEC00–H'FFEFFF
H'000000–H'0003FF
H'000400–H'0007FF
H'000800–H'000BFF
H'000C00–H'000FFF
Figure 17.14 Example of Overlap Between Flash Memory Area and RAM Area
*: Don’t care
H'000000
H'0003FF
H'000400
H'0007FF
H'000800
H'000BFF
H'000C00
H'000FFF
H'001000
H'01FFFF
Flash memory area
Emulation block
(When RAMS = 1, RAM1 = 0, and RAM0 = 1)
Block Name
EB0 (1 kbyte)
EB1 (1 kbyte)
EB2 (1 kbyte)
EB3 (1 kbyte)
RAM area 1 kbyte
EB0
EB1
EB2
EB3
EB4
EB9
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
Bit 2
RAMS
0
1
1
1
1
Rev. 4.00 Feb 15, 2006 page 571 of 900
Bit 1
RAM1
*
0
0
1
1
Overlap RAM
RAM area
(3 kbytes)
(1 kbyte)
RAM
Bit 0
RAM0
*
0
1
0
1
Description
RAM emulation not
selected
RAM emulation
selected
H'FFEC00
H'FFEFFF
H'FFF000
H'FFFBFF
REJ09B0291-0400
Section 17 ROM

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