DF2345TE20 Renesas Electronics America, DF2345TE20 Datasheet - Page 633

• Manufacturer Part Number: DF2345TE20
• Description: MCU 5V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2345TE20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2345TE20; HD64F2345TE20

17.13.10 Notes On Memory Programming
Notes: 1. The flash memory is initially in the erased state when the device is shipped by Renesas
When programming addresses which have previously been programmed, carry out auto-
erasing before auto-programming. (See figure 17.35.)
When performing programming using writer mode on a chip that has been programmed/erased
in an on-board programming mode, auto-erasing is recommended before carrying out auto-
programming.
Figure 17.35 Reprogramming an Address that has Already Been Programmed
2. Auto-programming in the writer mode should be performed only once for each 128-
Technology. For other chips for which the erasure history is unknown, it is
recommended that auto-erasing be executed to check and supplement the initialization
(erase) level.
byte write unit block.
It is not possible to write additional data to a 128-byte write unit block that has already
been programmed. To reprogram a block, first use the auto-erase mode and then use
the auto-program mode.
Reprogramming an address that
has already been programmed
(all of flash memory)
Auto-program
Auto-erase
End
Rev. 4.00 Feb 15, 2006 page 607 of 900
REJ09B0291-0400
Section 17 ROM