DF2345TE20 Renesas Electronics America, DF2345TE20 Datasheet - Page 866

• Manufacturer Part Number: DF2345TE20
• Description: MCU 5V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2345TE20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2345TE20; HD64F2345TE20

Appendix B Internal I/O Register
FLMCR1—Flash Memory Control Register 1
Rev. 4.00 Feb 15, 2006 page 840 of 900
REJ09B0291-0400
Bit
Initial value
Read/Write
Note: * Determined by the state of the FWE pin.
:
:
:
FWE
—*
Flash Write Enable
R
7
0
1
Software Write Enable
0
1
When a low level is input to the FWE pin (hardware-protected state)
When a high level is input to the FWE pin
Writes disabled
Writes enabled
[Setting condition]
When FWE = 1
SWE
R/W
6
0
—
—
5
0
—
—
Erase-Verify
4
0
0
1
Erase-verify mode cleared
Transition to erase-verify mode
[Setting condition]
When FWE = 1 and SWE = 1
Program-Verify
H'FFC8
0
1
R/W
EV
3
0
Program-verify mode cleared
Transition to program-verify mode
[Setting condition]
When FWE = 1 and SWE = 1
Erase
0
1
Program
Erase mode cleared
Transition to erase mode
[Setting condition]
When FWE = 1, SWE = 1,
and ESU = 1
0
1
R/W
PV
2
0
Program mode cleared
Transition to program mode
[Setting condition]
When FWE = 1, SWE = 1,
and PSU = 1
R/W
E
1
0
R/W
P
0
0
FLASH