DF2345TE20 Renesas Electronics America, DF2345TE20 Datasheet - Page 585

• Manufacturer Part Number: DF2345TE20
• Description: MCU 5V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2345TE20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2345TE20; HD64F2345TE20

User program mode
1. Initial state
3. Flash memory initialization
(1) The FWE assessment program that confirms
that the FWE pin has been driven high, and (2)
the program that will transfer the programming/
erase control program to on-chip RAM should be
written into the flash memory by the user
beforehand. (3) The programming/erase control
program should be prepared in the host or in the
flash memory.
The programming/erase program in RAM is
executed, and the flash memory is initialized (to
H'FF). Erasing can be performed in block units,
but not in byte units.
H8S/2345 F-ZTAT chip
H8S/2345 F-ZTAT chip
Application program
Transfer program
Transfer program
FWE assessment
FWE assessment
Flash memory
Flash memory
Flash memory
Boot program
Boot program
(old version)
program
program
erase
erase control program
New application
New application
Programming/
program
program
Host
Host
Figure 17.10 User Program Mode (Example)
erase control program
Programming/
RAM
RAM
SCI
SCI
2. Programming/erase control program transfer
4. Writing new application program
H8S/2345 F-ZTAT chip
H8S/2345 F-ZTAT chip
When the FWE pin is driven high, user software
confirms this fact, executes the transfer program
in the flash memory, and transfers the
programming/erase control program to RAM.
Next, the new application program in the host is
written into the erased flash memory blocks. Do
not write to unerased blocks.
Application program
Transfer program
New application
FWE assessment
FWE assessment
Rev. 4.00 Feb 15, 2006 page 559 of 900
Transfer program
Flash memory
Flash memory
Boot program
Boot program
(old version)
program
program
program
New application
program
Host
Host
erase control program
erase control program
Programming/
Programming/
Program execution state
RAM
RAM
REJ09B0291-0400
Section 17 ROM
SCI
SCI