DF2345TE20 Renesas Electronics America, DF2345TE20 Datasheet - Page 629

• Manufacturer Part Number: DF2345TE20
• Description: MCU 5V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2345TE20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2345TE20; HD64F2345TE20

Notes on Use of Erase-Program Mode
17.13.7 Status Read Mode
Address
Auto-erase mode supports only entire memory erasing.
Do not perform a command write during auto-erasing.
Confirm normal end of auto-erasing by checking FO
be used for this purpose (FO
pin).
The status polling FO
the next command write is performed, reading is possible by enabling CE and OE.
Status read mode is used to identify what type of abnormal end has occurred. Use this mode
when an abnormal end occurs in auto-program mode or auto-erase mode.
The return code is retained until a command write for other than status read mode is
performed.
FWE
Data
FO
FO
WE
OE
CE
7
6
t
ens
t
ces
t
f
t
wep
Figure 17.32 Auto-Erase Mode Timing Waveforms
H'20
CL
t
ds
t
t
ceh
dh
6
in
t
r
and FO
t
nxtc
7
status polling uses the auto-erase operation end identification
7
pin information is retained until the next command write. Until
H'20
DL
in
t
erase
Erase normal end
confirmation signal
Erase end identification
signal
t
ests
(100 to 40000 ms)
6
. Alternatively, status read mode can also
Rev. 4.00 Feb 15, 2006 page 603 of 900
t
spa
FO
0
to FO
t
enh
5
= 0
REJ09B0291-0400
Section 17 ROM
t
nxtc