DF2345TE20 Renesas Electronics America, DF2345TE20 Datasheet - Page 603

• Manufacturer Part Number: DF2345TE20
• Description: MCU 5V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2345TE20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2345TE20; HD64F2345TE20

Notes: 1. FWE pin and mode pin input must satisfy the mode programming setup time (t
17.8.2
When set to user program mode, the chip can program and erase its flash memory by executing a
user program/erase control program. Therefore, on-board reprogramming of the on-chip flash
memory can be carried out by providing on-board means of FWE control and supply of
programming data, and storing a program/erase control program in part of the program area as
necessary.
To select user program mode, select a mode that enables the on-chip flash memory (mode 6 or 7),
and apply a high level to the FWE pin. In this mode, on-chip supporting modules other than flash
memory operate as they normally would in modes 6 and 7, see figures 17.37 and 17.38.
The contents of the CPU’s internal general registers are undefined at this time, so these
registers must be initialized immediately after branching to the programming control program.
In particular, since the stack pointer (SP) is used implicitly in subroutine calls, etc., a stack area
must be specified for use by the programming control program.
Initial settings must also be made for the other on-chip registers.
Boot mode can be entered by making the settings to the FWE pin and the mode pins (MD
MD
To change from boot mode to another mode (user mode, etc.), the microcomputer's internal
boot mode status must first be cleared by inputting a reset using the RES pin *
RES pin must be kept low (t
Do not change the FWE pin and mode pin input levels in boot mode, and do not drive the FWE
pin low while the boot program is being executed or while flash memory is being programmed
or erased. *
If the FWE pin or mode pin input levels are changed (for example, from low to high) during a
reset, the state of ports with multiplexed address functions and bus control output pins (AS,
RD, HWR, LWR) will change according to the change in the microcomputer’s operating
mode *
Therefore, care must be taken to make pin settings to prevent these pins from becoming output
signal pins during a reset, or to prevent collision with signals outside the microcomputer.
0
2. For further information on FWE application and disconnection, see section 17.14,
3. See appendix D, Pin States.
) shown in Table 17.14 and executing a reset-start. (See figure 17.36.)
User Program Mode
3
.
200 ns) with respect to the reset release timing, as shown in figures 17.36 to 17.38.
Flash Memory Programming and Erasing Precautions.
2
RESW
) for at least 20 states. (See figure 17.38.)
Rev. 4.00 Feb 15, 2006 page 577 of 900
REJ09B0291-0400
Section 17 ROM
1
. In this case, the
MDS
2
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