DF2345TE20 Renesas Electronics America, DF2345TE20 Datasheet - Page 590

• Manufacturer Part Number: DF2345TE20
• Description: MCU 5V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2345TE20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2345TE20; HD64F2345TE20

Section 17 ROM
17.7
17.7.1
Note:
FLMCR1 is an 8-bit register used for flash memory operating mode control. Program-verify mode
or erase-verify mode is entered by setting SWE to 1 when FWE = 1. Program mode is entered by
setting SWE to 1 when FWE = 1, then setting the PSU bit in FLMCR2, and finally setting the P
bit. Erase mode is entered by setting SWE to 1 when FWE = 1, then setting the ESU bit in
FLMCR2, and finally setting the E bit. FLMCR1 is initialized by a reset, and in hardware standby
mode and software standby mode. Its initial value is H'80 when a high level is input to the FWE
pin, and H'00 when a low level is input. When on-chip flash memory is disabled (modes 4 and 5),
a read will return H'00, and writes are invalid.
Writes to the SWE bit in FLMCR1 are enabled only when FWE = 1; writes to the EV and PV bits
only when FWE=1 and SWE=1; writes to the E bit only when FWE = 1, SWE = 1, and ESU = 1;
and writes to the P bit only when FWE = 1, SWE = 1, and PSU = 1.
Bit 7—Flash Write Enable Bit (FWE): Sets hardware protection against flash memory
programming/erasing. See section 17.14, Flash Memory Programming and Erasing Precautions,
before using this bit.
Bit 7
FWE
0
1
Rev. 4.00 Feb 15, 2006 page 564 of 900
REJ09B0291-0400
Bit
Initial value
Read/Write
* Determined by the state of the FWE pin.
Register Descriptions
Flash Memory Control Register 1 (FLMCR1)
Description
When a low level is input to the FWE pin (hardware-protected state)
When a high level is input to the FWE pin
FWE
— *
R
7
SWE
R/W
6
0
—
—
5
0
—
—
4
0
R/W
EV
3
0
R/W
PV
2
0
R/W
E
1
0
R/W
P
0
0