DF2345TE20 Renesas Electronics America, DF2345TE20 Datasheet - Page 634

• Manufacturer Part Number: DF2345TE20
• Description: MCU 5V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2345TE20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2345TE20; HD64F2345TE20

Section 17 ROM
17.14
Precautions concerning the use of on-board programming mode, the RAM emulation function, and
writer mode are summarized below.
Use the specified voltages and timing for programming and erasing: Applied voltages in
excess of the rating can permanently damage the device. Use a PROM programmer that supports
Renesas Technology microcomputer device types with 128-kbyte on-chip flash memory.
Do not select the HN28F101 setting for the PROM programmer, and only use the specified socket
adapter. Incorrect use will result in damaging the device.
Powering on and off (see figures 17.36 to 17.38): Do not apply a high level to the FWE pin until
V
When applying or disconnecting V
hardware protection state.
The power-on and power-off timing requirements should also be satisfied in the event of a power
failure and subsequent recovery. If these timing requirements are not satisfied, the microcomputer
experience program runaway, possibly resulting in excessive programming and erasing that could
cause the memory cell to no longer operate properly.
FWE pin application/disconnection (see figures 17.36 to 17.38): FWE pin application should be
carried out when MCU operation is in a stable condition. If MCU operation is not stable, fix the
FWE pin low and set the protection state.
The following points must be observed concerning FWE pin application and disconnection to
prevent unintentional programming or erasing of flash memory:
Rev. 4.00 Feb 15, 2006 page 608 of 900
REJ09B0291-0400
CC
Apply the FWE pin when the V
the FWE pin when oscillation has stabilized (after the oscillation settling time t
elapsed).
In boot mode, apply and disconnect the FWE pin during a reset.
In user program mode, the FWE pin can be switched between high and low level regardless of
the reset state. FWE pin input can also be switched during program execution in flash memory.
Do not apply the FWE pin if program runaway has occurred.
Disconnect the FWE pin only when the SWE, ESU, PSU, EV, PV, P, and E bits in FLMCR1
and FLMCR2 are cleared.
Make sure that the SWE, ESU, PSU, EV, PV, P, and E bits are not set by mistake when
applying or disconnecting the FWE pin.
has stabilized. Also, drive the FWE pin low before turning off V
Flash Memory Programming and Erasing Precautions
CC
CC
, fix the FWE pin low and place the flash memory in the
voltage has stabilized within its rated voltage range. Apply
CC
.
OSC1
has