MC912DG128A Motorola, MC912DG128A Datasheet - Page 98

• Manufacturer Part Number: MC912DG128A
• Description: Microcontrollers
• Manufacturer: Motorola

Erasing the Flash EEPROM
Flash EEPROM
MC68HC912DT128A Rev 2.0
98
and $XXC0. Use this step-by-step procedure to program a row of Flash
memory.
This program sequence is repeated throughout the memory until all data
is programmed. For minimum overall programming time and least
program disturb effect, the sequence should be part of an intelligent
operation which iterates per row.
The following sequence demonstrates the recommended procedure for
erasing any of the Flash EEPROM array.
10. Wait for a time, t
11. Clear the HVEN bit.
12. After time, t
1. Set the PGM bit. This configures the memory for program
2. Write to any Flash address with any data within the row address
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time, t
6. Write to the Flash address with data to the word desired to be
7. Wait for a time, t
8. Repeat step 6 and 7 until all the words within the row are
9. Clear the PGM bit.
1. Set the ERAS bit.
2. Write to any valid address in the Flash array. The data written and
operation and enables the latching of address and data for
programming.
range desired.
programmed. If BOOTP is asserted, an attempt to program an
address in the boot block will be ignored.
programmed.
mode again.
the address written are not important. The boot block will be
Flash EEPROM
RCV
(min 1 s), the memory can be accessed in read
NVS
PGS
FPGM
NVH
(min. 10 s).
(min. 5 s).
(min. 5 s).
(min. 30 s).
MOTOROLA
6-flash