MPC8313CZQADDC Freescale Semiconductor, MPC8313CZQADDC Datasheet - Page 513

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MPC8313CZQADDC

Manufacturer Part Number
MPC8313CZQADDC
Description
Microprocessors - MPU 8313 REV2.2 PB NO EN EXT
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MPC8313CZQADDC

Processor Series
MPC8313
Core
e300
Data Bus Width
16 bit
Maximum Clock Frequency
133 MHz
Program Memory Size
16 KB
Data Ram Size
16 KB
Interface Type
I2C
Mounting Style
SMD/SMT
Package / Case
PBGA
Number Of Programmable I/os
32
Number Of Timers
4

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10.4.3.2.5
Data write instructions assert LFWE repeatedly (with LFCLE and LFALE both negated) to transfer one or
more bytes of write data to the NAND Flash EEPROM. Data write instructions are distinguished by their
data source:
10.4.3.3
If BR
include the CSCT, CST, CHT, RST, SCY, TRLX, and EHTR fields.
10.4.3.3.1
The timing of LCSn assertion in FCM mode is illustrated by the timing diagram in
asserted immediately following LALE negation, and remains asserted until the last instruction in FIR has
completed. The delay, t
instruction is controlled by ORn[CSCT] and ORn[TRLX], as shown in
be set in accordance with the NAND Flash EEPROM chip-select to WE set-up time specification.
Freescale Semiconductor
n
[MSEL] selects the FCM, the attributes for the memory cycle are taken from OR
Read data to buffer RAM once waited on ready—RBW. This instruction first polls the LFRB pin,
waiting for it to go high, before proceeding with a read to buffer as described for the RB instruction.
Sampling and time-outs for polling the LFRB pin follow the behavior of CWn instructions.
Read data/status to MDR once waited on ready—RSW. This instruction first polls the LFRB pin,
waiting for it to go high, before proceeding with a status read to MDR as described for the RS
instruction. Sampling and time-outs for polling the LFRB pin follow the behavior of CWn
instructions.
Write data from FCM buffer RAM—WB. This instruction writes FBCR[BC] bytes of data from
the current FCM RAM buffer addressed by FPAR. If FBCR[BC] = 0, an entire page (including
spare region) is transferred in a burst, starting at the page boundary, and the ECC calculation is
stored in the appropriate FECC
FMR[ECCM]. If the value of FBCR[BC] takes the write pointer beyond the end of the spare region
in the buffer, the value of data written by FCM is undefined.
Write data/status from MDR—WS. This instruction asserts LFWE exactly once to write one byte
(8-bit port size) of data taken from the next AS field of MDR. Attempts to write beyond four bytes
of MDR has the effect of writing zeros. The MDR write pointer is independent of the MDR read
pointer used by RS and RSW instructions.
FCM Signal Timing
MPC8313E PowerQUICC™ II Pro Integrated Processor Family Reference Manual, Rev. 2
FCM Data Write Instructions
FCM Chip-Select Timing
CSCT
Table 10-35. FCM Chip-Select to First Command Timing
ORn[TRLX] ORn[CSCT] LCS n to First Command Delay
, between LCSn assertion and commencement of the first NAND Flash
0
0
1
1
n
registers and spare region in accordance with the setting of
0
1
0
1
1 LCLK clock cycle
4 LCLK clock cycles
2 LCLK clock cycles
8 LCLK clock cycles
Table
10-35. ORn[CSCT] should
Enhanced Local Bus Controller
Figure
n
. These attributes
10-45. LCSn is
10-65

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