DF3052BX25V Renesas Electronics America, DF3052BX25V Datasheet - Page 173

• Manufacturer Part Number: DF3052BX25V
• Description: MCU 5V 512K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of DF3052BX25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

DDR Write Timing: Data written to a data direction register (DDR) to change a CS
CS
cycle. Figure 6.21 shows the timing when the CS
BRCR Write Timing: Data written to switch between A
output takes effect starting from the T
timing when a pin is changed from generic input to A
n
output to generic input, or vice versa, takes effect starting from the T
Address
bus
CS
Address
bus
A
23
1
to A
21
High impedance
Figure 6.22 BRCR Write Timing
Figure 6.21 DDR Write Timing
3
state of the BRCR write cycle. Figure 6.22 shows the
T
T
High impedance
1
1
1
pin is changed from generic input to CS
P8DDR address
BRCR address
23
, A
T
T
23
Rev. 3.00 Mar 21, 2006 page 143 of 814
2
2
22
, A
, or A
22
, or A
21
output.
21
output and generic input or
T
T
3
3
Section 6 Bus Controller
3
state of the DDR write
REJ09B0302-0300
n
pin from
1
output.