DF3052BX25V Renesas Electronics America, DF3052BX25V Datasheet - Page 744

• Manufacturer Part Number: DF3052BX25V
• Description: MCU 5V 512K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of DF3052BX25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Appendix B Internal I/O Register
EBR1—Erase Block Register 1
EBR2—Erase Block Register 2
Rev. 3.00 Mar 21, 2006 page 714 of 814
REJ09B0302-0300
Bit
Initial value *
Read/Write
Bit
Initial value*
Read/Write
Note: * The initial value is H'00 in modes 5, 6 and 7 (on-chip ROM enabled). In modes
Note: * The initial value is H'00 in modes 5, 6 and 7 (on-chip ROM enabled). In modes
1, 2, 3, and 4 (on-chip ROM disabled), this register cannot be modified and is
always read as H'FF.
1, 2, 3, and 4 (on-chip ROM disabled), this register cannot be modified and is
always read as H'FF.
R/W*
EB15
R/W*
EB7
7
0
7
0
R/W*
EB14
R/W*
EB6
6
0
6
0
Erase block specification bits (1)
Erase block specification bits (2)
0 Erase protection state
1 Erasable state
0 Erase protection state
1 Erasable state
R/W*
EB13
R/W*
EB5
5
0
5
0
R/W*
EB12
R/W*
EB4
4
0
4
0
R/W*
EB11
R/W*
EB3
3
0
3
0
H'42
H'43
R/W*
EB10
R/W*
EB2
2
0
2
0
R/W*
R/W*
EB1
EB9
1
0
1
0
Flash memory
Flash memory
R/W*
R/W*
EB1
EB8
0
0
0
0