DF3052BX25V Renesas Electronics America, DF3052BX25V Datasheet - Page 603

• Manufacturer Part Number: DF3052BX25V
• Description: MCU 5V 512K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of DF3052BX25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Bits 7 to 4—Reserved: These bits always read 1.
Bit 3—RAM Select (RAMS): Specifies selection or non-selection of flash memory emulation in
RAM. When RAMS = 1, all flash memory block are program/erase-protected.
Bit 3: RAMS
0
1
Bits 2 to 0—Flash Memory Area Selection: These bits are used together with bit 3 to select the
flash memory area to be overlapped with RAM. (See table 18.4.)
Table 18.4 Flash Memory Area Divisions
Addresses
H'FFE000–H'FFEFFF
H'000000–H'000FFF
H'001000–H'001FFF
H'002000–H'002FFF
H'003000–H'003FFF
H'004000–H'004FFF
H'005000–H'005FFF
H'006000–H'006FFF
H'007000–H'007FFF
Legend:
*: Don't care
Description
Emulation not selected
Program/erase-protection of all flash memory blocks is disabled
Emulation selected
Program/erase-protection of all flash memory blocks is enabled
EB0 (4 kbytes)
EB1 (4 kbytes)
EB2 (4 kbytes)
EB3 (4 kbytes)
EB4 (4 kbytes)
EB5 (4 kbytes)
EB6 (4 kbytes)
EB7 (4 kbytes)
Block Name
RAM area 4 kbytes
RAMS
0
1
1
1
1
1
1
1
1
Rev. 3.00 Mar 21, 2006 page 573 of 814
RAM1
*
0
0
0
0
1
1
1
1
RAM1
*
0
0
1
1
0
0
1
1
REJ09B0302-0300
Section 18 ROM
(Initial value)
RAM0
*
0
1
0
1
0
1
0
1