DF3052BX25V Renesas Electronics America, DF3052BX25V Datasheet - Page 615

MCU 5V 512K 100-TQFP

DF3052BX25V

Manufacturer Part Number
DF3052BX25V
Description
MCU 5V 512K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheets

Specifications of DF3052BX25V

Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
70
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF3052BX25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
18.7.2
In program-verify mode, the data written in program mode is read to check whether it has been
correctly written in the flash memory.
After the elapse of the given programming time, clear the P1 and P2 bits in FLMCR1 and
FLMCR2, then wait for at least (tcp) µs before clearing the PSU1 and PSU2 bits to exit program
mode. After exiting program mode, the watchdog timer setting is also cleared. The operating
mode is then switched to program-verify mode by setting the PV1 and PV2 bits in FLMCR1 and
FLMCR2. Before reading in program-verify mode, a dummy write of H'FF data should be made to
the addresses to be read. The dummy write should be executed after the elapse of (tspv ) µs or
more. When the flash memory is read in this state (verify data is read in 16-bit units), the data at
the latched address is read. Wait at least (tspvr) µs after the dummy write before performing this
read operation. Next, the originally written data is compared with the verify data, and reprogram
data is computed (see figure 18.12) and transferred to RAM. After verification of 128 bytes of
data has been completed, exit program-verify mode, wait for at least (tcpv) µs, then determine
whether 128-byte programming has finished. If reprogramming is necessary, set program mode
again, and repeat the program/program-verify sequence as before. The maximum value for
repetition of the program/program-verify sequence is indicated by the maximum programming
count (N). Leave a wait time of at least (tcswe) µs after clearing SWE1 or SWE2.
18.7.3
1. The program/program-verify procedure for the H8/3052BF is a 128-byte-unit programming
2. When performing continuous writing of 128-byte data to flash memory, byte-unit transfer
3. Verify data is read in word units.
4. The write pulse is applied and a flash memory write executed while the P1 bit in FLMCR1 or
algorithm.
In order to perform 128-byte-unit programming, the lower 8 bits of the write start address must
be H'00 or H'80.
should be used.
128-byte data transfer is necessary even when writing fewer than 128 bytes of data. H'FF data
must be written to the extra addresses.
the P2 bit in FLMCR2 is set. In the H8/3052BF, write pulses should be applied as follows in
the program/program-verify procedure to prevent voltage stress on the device and loss of write
data reliability.
a. After write pulse application, perform a verify-read in program-verify mode and apply a
write pulse again for any bits read as 1 (reprogramming processing). When all the 0-write
bits in the 128-byte write data are read as 0 in the verify-read operation, the
Program-Verify Mode
Notes on Program/Program-Verify Procedure
Rev. 3.00 Mar 21, 2006 page 585 of 814
REJ09B0302-0300
Section 18 ROM

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