DF3052BX25V Renesas Electronics America, DF3052BX25V Datasheet - Page 631

• Manufacturer Part Number: DF3052BX25V
• Description: MCU 5V 512K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of DF3052BX25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

5.
18.11
The following describes notes when using the on-board programming mode, RAM emulation
function, and PROM mode.
1. Program/erase with the specified voltage and timing.
2. Notes on powering on/powering off (See figures 18.18 to 18.20)
3. Notes on FWE pin High/Low switching (See figures 18.18 to 18.20)
Applied voltages in excess of the rating can permanently damage the device.
Use a PROM writer that supports the Renesas 512 kbytes flash memory on-board
microcomputer device type.
If the wrong device type is set, a high level may be input to the FWE pin, resulting in
permanent damage to the device.
Input a high level to the FWE pin after verifying Vcc. Before turning off Vcc, set the FWE pin
to a low level.
When powering on and powering off the Vcc power supply, fix the FWE pin low and set the
flash memory to the hardware protection mode.
Be sure that the powering on and powering off timing is satisfied even when the power is
turned off and back on in the event of a power interruption, etc. If this timing is not satisfied,
microcomputer runaway, etc., may cause overprogramming or overerasing and the memory
cells may not operate normally.
Input FWE in the state microcomputer operation is verified. If the microcomputer does not
satisfy the operation confirmation state, fix the FWE pin low to set the protection mode.
To prevent erroneous programming/erasing of flash memory, note the following in FWE pin
High/Low switching:
a. Apply an input to the FWE pin after the Vcc voltage has stabilized within the rated voltage.
b. Apply an input to the FWE pin when the oscillation has stabilized (after the oscillation
Refer to the instruction manual provided with the socket adapter, or other relevant
documentation, for information on PROM writers and associated program versions that are
compatible with the PROM mode of the H8/3052BF.
If an input is applied to the FWE pin when the microcomputer Vcc voltage does not satisfy
the rated voltage, flash memory may be erroneously programmed or erased because the
microcomputer is in the unconfirmed state.
stabilization time).
When turning on the Vcc power, apply an input to the FWE pin after holding the RES pin
at a low level during the oscillation stabilization time (t
to the FWE pin when oscillation is stopped or unstable.
Notes on Flash Memory Programming/Erasing
Rev. 3.00 Mar 21, 2006 page 601 of 814
osc1
= 20 ms). Do not apply an input
REJ09B0302-0300
Section 18 ROM