DF3052BX25V Renesas Electronics America, DF3052BX25V Datasheet - Page 596

• Manufacturer Part Number: DF3052BX25V
• Description: MCU 5V 512K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of DF3052BX25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 18 ROM
Bit 5—Erase Setup Bit 1 (ESU1): Prepares for a transition to erase mode (applicable addresses:
H'00000 to H'3FFFF). Do not set the SWE1, PSU1, EV1, PV1, E1, or P1 bit at the same time. Set
this bit to 1 before setting bit E1 to 1 in FLMCR1.
Bit 5: ESU1
0
1
Bit 4—Program Setup Bit 1 (PSU1): Prepares for a transition to program mode (applicable
addresses: H'00000 to H'3FFFF). Do not set the SWE1, ESU1, EV1, PV1, E1, or P1 bit at the
same time. Set this bit to 1 before setting bit P1 to 1 in FLMCR1.
Bit 4: PSU1
0
1
Bit 3—Erase-Verify 1 (EV1): Selects erase-verify mode transition or clearing (applicable
addresses: H'00000 to H'3FFFF). Do not set the SWE1, ESU1, PSU1, PV1, E1, or P1 bit at the
same time.
Bit 3: EV1
0
1
Rev. 3.00 Mar 21, 2006 page 566 of 814
REJ09B0302-0300
Erase setup cleared
Erase setup
[Setting condition]
When FWE = 1 and SWE1 = 1
Program setup cleared
Program setup
[Setting condition]
When FWE = 1 and SWE1 = 1
Erase-verify mode cleared
Transition to erase-verify mode
[Setting condition]
When FWE = 1 and SWE1 = 1
Description
Description
Description
(Initial value)
(Initial value)
(Initial value)