DF3052BX25V Renesas Electronics America, DF3052BX25V Datasheet - Page 194

MCU 5V 512K 100-TQFP

DF3052BX25V

Manufacturer Part Number
DF3052BX25V
Description
MCU 5V 512K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheets

Specifications of DF3052BX25V

Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
70
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF3052BX25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 7 Refresh Controller
Operation in Power-Down State: The refresh controller operates in sleep mode. It does not
operate in hardware standby mode. In software standby mode RTCNT is initialized, but RFSHCR,
RTMCSR bits 5 to 3, and RTCOR retain their settings prior to the transition to software standby
mode.
Example 1: Connection to 2WE 1-Mbit DRAM (1-Mbyte Mode): Figure 7.7 shows typical
interconnections to a 2WE 1-Mbit DRAM, and the corresponding address map. Figure 7.8 shows a
setup procedure to be followed by a program for this example. After power-up the DRAM must be
refreshed to initialize its internal state. Initialization takes a certain length of time, which can be
measured by using an interrupt from another timer module, or by counting the number of times
RTMCSR bit 7 (CMF) is set. Note that no refresh cycle is executed for the first refresh request
after exit from the reset state or standby mode (the first time the CMF flag is set; see figure 7.3).
When using this example, check the DRAM device characteristics carefully and use a procedure
that fits them.
Rev. 3.00 Mar 21, 2006 page 164 of 814
REJ09B0302-0300
Figure 7.7 Interconnections and Address Map for 2WE 1-Mbit DRAM (Example)
H8/3052BF
H'60000
H'7FFFF
D
15
HWR
to D
LWR
CS
RD
A
A
A
A
A
A
A
A
8
7
6
5
4
3
2
1
3
0
DRAM area
a. Interconnections (example)
b. Address map
Area 3 (1-Mbyte mode)
A
A
A
A
A
A
A
A
RAS
CAS
UW
LW
OE
I/O
7
6
5
4
3
2
1
0
15
2
to I/O
WE
16-bit organization
1-Mbit DRAM with
0

Related parts for DF3052BX25V