DF3052BX25V Renesas Electronics America, DF3052BX25V Datasheet - Page 599

• Manufacturer Part Number: DF3052BX25V
• Description: MCU 5V 512K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of DF3052BX25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Bit 6—Software Write Enable Bit 2 (SWE2): Enables or disables flash memory programming
and erasing (applicable addresses: H'40000 to H'7FFFF). Set this bit when setting bits 5 to 0 and
bits 7 to 4 of EBR2.
Bit 6: SWE2
0
1
Note: * Do not execute a SLEEP instruction while the SWE2 bit is set to 1.
Bit 5—Erase Setup Bit 2 (ESU2): Prepares for a transition to erase mode (applicable addresses:
H'40000 to H'7FFFF). Set this bit to 1 before setting bit E2 to 1 in FLMCR2. Do not set the PSU2,
EV2, PV2, E2, or P2 bit at the same time.
Bit 5: ESU2
0
1
Bit 4—Program Setup Bit 2 (PSU2): Prepares for a transition to program mode (applicable
addresses: H'40000 to H'7FFFF). Set this bit to 1 before setting bit P2 to 1 in FLMCR2. Do not set
the ESU2, EV2, PV2, E2, or P2 bit at the same time.
Bit 4: PSU2
0
1
Writes disabled
Writes enabled *
[Setting condition]
When FWE = 1
Erase setup cleared
Erase setup
[Setting condition]
When FWE = 1 and SWE2 = 1
Program setup cleared
Program setup
[Setting condition]
When FWE = 1 and SWE2 = 1
Description
Description
Description
Rev. 3.00 Mar 21, 2006 page 569 of 814
REJ09B0302-0300
Section 18 ROM
(Initial value)
(Initial value)
(Initial value)