DF3052BX25V Renesas Electronics America, DF3052BX25V Datasheet - Page 611

• Manufacturer Part Number: DF3052BX25V
• Description: MCU 5V 512K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of DF3052BX25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Note: Normally do not apply a high level to the FWE pin. To prevent erroneous programming or
1
2
3
4
5
6
7
8
Input low level to FWE after SWE1
Transfer on-board programming
Execute on-board programming
(flash memory reprogramming)
erasing in the event of program runaway, etc., apply a high level to the FWE pin only
when programming/erasing flash memory (including flash memory emulation by RAM).
If program runaway, etc. causes overprogramming or overerasing of flash memory, the
memory cells will not operate normally.
MD
Branch to program in RAM
(user program mode exit)
program in flash memory
Execute user application
(user program mode)
2
and SWE2 bits clear
Figure 18.10 User Program Mode Execution Procedure (Example)
– MD
program to RAM
program in RAM
FWE = high
Reset start
0
= 101, 110, 111
Procedure
The user writes a program that executes steps
3 to 8 in advance as shown below.
1. Sets the mode pin to an on-chip ROM
2. Starts the CPU via reset.
3. Transfers the on-board programming
4. Branches to the program in RAM.
5. Sets the FWE pin to a high level. *
6. After confirming that the FWE pin is a high
7. At the end of reprograming, clears the
8. Branches to, and executes, the user
Note: * For notes on FWE pin High/Low, see
enable mode (mode 5, 6, or 7).
(The CPU can also be started from the user
program mode by setting the FWE pin to
high level during reset; that is, during the
period the RES pin is a low level.) *
program to RAM.
(Switches to user program mode.)
level, executes the on-board programming
program in RAM. This reprograms the user
application program in flash memory.
SWE1 and SWE2 bit, and exits the user
program mode by switching the FWE pin
from a high level to a low level. *
application program reprogrammed in flash
memory.
Rev. 3.00 Mar 21, 2006 page 581 of 814
section 18.11, Notes on Flash Memory
Programming/Erasing.
REJ09B0302-0300
Section 18 ROM