DF3052BX25V Renesas Electronics America, DF3052BX25V Datasheet - Page 613

• Manufacturer Part Number: DF3052BX25V
• Description: MCU 5V 512K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of DF3052BX25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

FWE = 1
Software programming
programming mode
Notes: In order to perform a normal read of flash memory, SWE must be cleared to 0.
disable state
Normal mode
On-board
Figure 18.11 State Transitions Caused by FLMCR1 and FLMCR2 Bit Settings
Also note that verify-reads can be performed during the programming/erasing process.
1.
2. Do not make a state transition by setting or clearing multiple bits simultaneously.
3. After a transition from erase mode to the erase setup state, do not enter erase mode without passing
4. After a transition from program mode to the program setup state, do not enter program mode without
through the software programming enable state.
passing through the software programming enable state.
FWE = 0
: Normal mode
* 1
SWE1(2) = 1
SWE1(2) = 0
programming
* 2
Software
enable
state
: On-board programming mode
Rev. 3.00 Mar 21, 2006 page 583 of 814
Program-verify
Erase-verify
Erase setup
setup state
Program
mode
mode
state
* 3
* 4
E1(2) = 0
P1(2) = 0
E1(2) = 1
P1(2) = 1
REJ09B0302-0300
Section 18 ROM
Program mode
Erase mode