DF3052BX25V Renesas Electronics America, DF3052BX25V Datasheet - Page 673

• Manufacturer Part Number: DF3052BX25V
• Description: MCU 5V 512K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of DF3052BX25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Notes: 1. Set the times according to the program/erase algorithms.
21.3
This section shows timing diagrams.
21.3.1
Bus timing is shown as follows:
Basic bus cycle: two-state access
Figure 21.4 shows the timing of the external two-state access cycle.
Basic bus cycle: three-state access
Figure 21.5 shows the timing of the external three-state access cycle.
2. Programming time per 128 bytes. (Shows the total time the P1 bit or P2 bit in the flash
3. Block erase time. (Shows the total time the E1 bit in FLMCR1 or E2 bit in FLMCR2 is
4. To specify the maximum programming time value (t
5. For the maximum erase time (t
6.
7.
8.
Operational Timing
Bus Timing
The wait time after P bit setting should be changed as follows according to the value of
Programming counter (n) = 1 to 6:
Programming counter (n) = 7 to 1000:
Programming counter (n) [in additional programming] = 1 to 6:
t
To set the maximum erase time, the values of tse and N should be set so as to satisfy
Examples:
memory control register (FLMCR1 or FLMCR2) is set. It does not include the
programming verification time.)
set. It does not include the erase verification time.)
programming algorithm, set the max. value (1000) for the maximum programming count
(N).
the programming counter (n).
wait time after E bit setting (tse) and the maximum erase count (N):
the above formula.
E
Minimum cycle value which guarantees all characteristics after reprogramming.
(Reprogram cycles from 1 to minimum value are guaranteed.)
Reference characteristics at 25°C. (This is a indication that reprogram operation can
normally function up to this figure.)
Data retention characteristics when reprogaram performed correctly within
specification value including minimum data retention period.
(max) = Wait time after E bit setting (tse)
When tse = 100 [ms], N = 12
When tse = 10 [ms], N = 120
E
(max)), the following relationship applies between the
maximum erase count (N)
Rev. 3.00 Mar 21, 2006 page 643 of 814
Section 21 Electrical Characteristics
P
(max)) in the 128-byte
tsp30 = 30 µs
tsp200 = 200 µs
tsp10 = 10 µs
REJ09B0302-0300