DF3052BX25V Renesas Electronics America, DF3052BX25V Datasheet - Page 633

• Manufacturer Part Number: DF3052BX25V
• Description: MCU 5V 512K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of DF3052BX25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

7. Do not use an interrupt during flash memory programming or erasing.
8. Do not perform additional programming. Reprogram flash memory after erasing.
9. Before programming, check that the chip is correctly mounted in the PROM programmer.
10. Do not touch the socket adapter or chip during programming. Touching either of these can
Similarly perform flash memory program execution and data read after clearing the SWE bit
even when using the RAM emulation function with a high level input to the FWE pin.
However, RAM area that overlaps flash memory space can be read/programmed whether the
SWE bit is set or cleared.
Since programming/erase operations (including emulation by RAM) have priority when a high
level is input to the FWE pin, disable all interrupt requests, including NMI.
With on-board programming, program to 128-byte programming unit blocks one time only.
Program to 128-byte programming unit blocks one time only even in the writer mode. Erase all
the programming unit blocks before reprogramming.
Overcurrent damage to the device can result if the index marks on the PROM programmer
socket, socket adapter, and chip are not correctly aligned.
cause contact faults and write errors.
Rev. 3.00 Mar 21, 2006 page 603 of 814
REJ09B0302-0300
Section 18 ROM